Сапельнікова О. Ю., Карачевцева Л. А., Панова О. В., Бурдейна Н. Б. Визначення напруженості локального електричного поля в окислених структурах макропористого кремнію з наночастинками ZnO та CdS на границі «Si – SiO2» // Міжнародний науковий журнал "Інтернаука". - 2020. - №3.​

Summary: Heterostructure p-GaTe–n-InSe was prepared by the method of mechanical contact of GaTe oxidized plate with van der Waals surface of InSe. Topology of surfaces of GaTe and InSe layered crystals were studied by using AFM-images. It is shown that there was formed thin oxide dielectric layer of Ga₂O₃ on the heterojunction p-GaTe–n-InSe.The direct branch ofthe current-voltage characteristics of the heterostructure show high diode properties. Sensitivity spectral area of p‑GaTe – n-InSe heterostructure was identified and the characteristics of its energy band diagram were shown.

Key words: indium selenide, layered crystals, heterojunction, AFM-images spectral characteristics.