Author
Novosjadly S. P.
Ivano-Frankivsk, Ukraine
- article
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Articles
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Technical sciences No. 2, January 2018
Features of the formation of Schottky field transistors with a self-condensed gate on the basis of nitride and tungsten silicide
Новосядлий Степан Петрович, Гуменюк Назарій Тарасович